NE5531079A-T1-A

NE5531079A-T1-A

  • Description:RF MOSFET LDMOS 7.5V 79A
  • Series:-

SKU:1a85c2e04bf2 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 7.5V 79A
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:460MHz
  • Gain:-
  • Voltage - Test:7.5 V
  • Current Rating (Amps):3A
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:40dBm
  • Voltage - Rated:30 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:79A
  • Configuration:-

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NE5531079A-T1-A

Overview

The NE5531079A-T1-A is an RF MOSFET transistor manufactured by CEL. It is a silicon N-channel LDMO device designed for Ultra High Frequency Band applications. The component features a lead-free package with dimensions of 5.70 x 5.70 mm and a height of 1.10 mm.

Feature Summary

  • Utilizes LDMO technology for RF performance
  • Designed for Ultra High Frequency Band operations

Applications

  • RF power amplification in UHF bands

Procurement Notes

Verify the specific manufacturer source, as the part number appears associated with multiple vendors including NEC and Renesas. Confirm that the T1 suffix corresponds to the intended reel packaging configuration and ensure the lead-free status matches project requirements.

Selection Notes

Select this component when an Ultra High Frequency silicon N-channel MOSFET is required. Ensure the design accommodates the specified 5.70 x 5.70 mm footprint and 1.10 mm height constraints within the PCB layout.

Part Context

This device belongs to the family of RF Power Field-Effect Transistors. It is categorized under Silicon N-Channel Metal-Oxide Semiconductor FETs intended for high-frequency signal processing and amplification tasks.

NE5531079A-T1-ANE5531079A-T1-A

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