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The NE5531079A-T1-A is an RF MOSFET transistor manufactured by CEL. It is a silicon N-channel LDMO device designed for Ultra High Frequency Band applications. The component features a lead-free package with dimensions of 5.70 x 5.70 mm and a height of 1.10 mm.
Verify the specific manufacturer source, as the part number appears associated with multiple vendors including NEC and Renesas. Confirm that the T1 suffix corresponds to the intended reel packaging configuration and ensure the lead-free status matches project requirements.
Select this component when an Ultra High Frequency silicon N-channel MOSFET is required. Ensure the design accommodates the specified 5.70 x 5.70 mm footprint and 1.10 mm height constraints within the PCB layout.
This device belongs to the family of RF Power Field-Effect Transistors. It is categorized under Silicon N-Channel Metal-Oxide Semiconductor FETs intended for high-frequency signal processing and amplification tasks.