NE5550234-T1-AZ

Overview

The NE5550234-T1-AZ is a silicon power MOSFET designed for VHF to UHF-Band Class-AB power amplifier applications. It operates with a drain-to-source voltage of 7.5V and a gate-to-source voltage of 2.2V, supporting a drain current of 0.38A. The device delivers high output power of 33.0 dBm at 460 MHz with a typical power added efficiency of 68% and linear gain of 23.5 dB. It features high ESD tolerance and is supplied in a 3-pin Power MiniMold package.

Feature Summary

• High output power capability suitable for RF amplification
• High power added efficiency for improved energy utilization
• High linear gain ensuring signal fidelity
• Robust electrostatic discharge (ESD) tolerance

Applications

• 150 MHz Band Radio System
• 460 MHz Band Radio System
• 900 MHz Band Radio System

Procurement Notes

Verify the specific ordering suffix '-T1' against official documentation to confirm tape-and-reel packaging requirements. Confirm that the 'AZ' designation aligns with lead-free specifications as indicated in the datasheet. Ensure compatibility with the 3-pin Power MiniMold footprint during procurement planning.

Selection Notes

Select this component for designs requiring Class-AB operation within VHF and UHF frequency bands. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for the specified power levels. Verify that the required input power and bias conditions match the device's recommended operating range for optimal performance.

Part Context

This part belongs to the NE5550 series of silicon power MOSFETs developed by CEL, a business partner of Renesas Electronics Corporation. The series targets radio communication systems, providing reliable amplification solutions across multiple frequency bands including 150 MHz, 460 MHz, and 900 MHz.

Replacement Considerations

Consult official substitution lists or contact the manufacturer for verified alternatives. Generic replacements may not match the specific RF performance metrics or package dimensions required for this application.

FAQ

What is the maximum drain-to-source voltage rating?

The absolute maximum rating for drain-to-source voltage is 30 V.

Is the device suitable for military applications?

No, Renesas Electronics products are neither intended nor authorized for use in military equipment or weapons of mass destruction.

What is the recommended soldering peak temperature?

The recommended peak temperature for infrared reflow soldering is 260°C or below, with a time at peak temperature of 10 seconds or less.