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The NE5550779A-A is an RF MOSFET transistor manufactured by CEL, utilizing LDMOS technology on a silicon substrate. Designed for high-frequency applications, it operates at 900 MHz with a gain of 22 dB and delivers an output power of 38.5 dBm. The device features a test voltage of 7.5 V and a rated voltage of 30 V, with a continuous drain current of 2.1 A. It is housed in a 4-SMD flat lead package (supplier device package 79A) and is currently classified as obsolete.
This component is officially marked as obsolete by the manufacturer. Availability is restricted to existing stock or secondary market sources. Verify authenticity and condition carefully when sourcing from non-direct suppliers. No new production units are expected. Ensure compatibility with existing designs before procurement due to end-of-life status.
Select this part only if the specific 900 MHz frequency, 38.5 dBm output power, and 22 dB gain meet design requirements. Consider the obsolete status and limited availability during selection. Evaluate thermal management needs for the 4-SMD package. Compare against newer generation LDMOS devices if long-term supply stability is critical for the product lifecycle.
Part of the NE5550 series from CEL, focusing on RF power MOSFETs. The NE5550779A-A specifically targets the 900 MHz band. Related variants include NE5550779A-T1-A and NE5550779A-A, differing primarily in packaging or tape/reel configurations. The series supports various RF amplifier architectures requiring high linearity and power density.
No public confirmed substitute part numbers are available in the provided documentation. Designers should consult CEL for potential next-generation replacements or evaluate equivalent specifications from other manufacturers if direct substitution is required.