NE5550779A-T1A-A

Overview

The NE5550779A-T1A-A is an obsolete RF MOSFET transistor manufactured by CEL, a Renesas Electronics brand. It is an LDMOS device designed for high-power radio frequency applications at 900 MHz. Key electrical parameters include a rated voltage of 30 V and a test voltage of 7.5 V. The component delivers an output power of 38.5 dBm with a gain of 22 dB and a Power Added Efficiency (PAE) of 66%. It operates with a test current of 140 mA and has a rated current of 2.1 A. The device is housed in a 4-SMD, flat leads package, specifically the 79A supplier device package.

Feature Summary

• High-efficiency LDMOS construction optimized for RF power amplification
• Capable of delivering significant output power at 900 MHz frequencies
• Designed for robust performance with high gain characteristics

Applications

• RF power amplifier stages in communication systems
• Base station transmitter modules operating in the 900 MHz band
• Industrial, Scientific, and Medical (ISM) radio frequency equipment

Procurement Notes

This component is officially classified as End-of-Life (EOL). Availability is restricted to remaining stock or secondary market sources. Verification of authenticity and storage history is critical due to the obsolete status. Buyers should confirm the specific manufacturing date code and ensure compliance with RoHS directives as documented in the original datasheet before procurement.

Selection Notes

Designers requiring this specific RF performance profile must evaluate alternative LDMOS transistors from the same family or competing manufacturers. Selection criteria should focus on matching the 900 MHz frequency, 30 V rating, and thermal management requirements. Since the part is obsolete, new designs should prioritize components with active supply chains and updated reliability data to ensure long-term production viability.

Part Context

The NE5550779A series belongs to the broader portfolio of RF power MOSFETs produced by CEL under Renesas Electronics. These devices are engineered for linear and non-linear RF applications. The specific suffix indicates tape-and-reel packaging. This model represents a legacy solution for 900 MHz infrastructure, now superseded by newer generations offering improved efficiency or integration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the precise RF characteristics required, direct pin-to-pin replacements may not exist. Engineers must perform rigorous simulation and testing when selecting cross-reference components from other RF MOSFET manufacturers.