NE66219-T1-A

Overview

The NE66219-T1-A is an NPN silicon RF bipolar transistor manufactured by CEL, designed for low noise and high-gain amplification applications. It utilizes a 25 GHz fT technology suitable for high-frequency oscillation circuits. The device is housed in a 3-pin Ultra Super Minimold (19, 1608) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 3.3 V, an emitter-base voltage (VEBO) of 1.5 V, and a continuous collector current rating of 35 mA. The component supports a power dissipation of 115 mW and offers a minimum DC collector/base gain (hFE) of 50.

Feature Summary

• Optimized for low noise and high-gain amplification in RF circuits
• Capable of supporting high-frequency oscillation tasks
• Utilizes advanced 25 GHz transition frequency technology

Applications

• Low noise amplifier stages in RF systems
• High-gain amplification modules
• High-frequency oscillator circuits

Procurement Notes

Verify the specific manufacturer source, as this part number has been associated with multiple vendors including NEC and Renesas historically. Confirm that the delivered unit matches the CEL specification sheet regarding the 1608 package dimensions and electrical limits. Ensure compliance with RoHS requirements if mandated by the design. Cross-reference the datasheet revision to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring an NPN silicon transistor with a 25 GHz fT capability in a compact SMD form factor. The 3.3 V VCEO limit dictates the biasing conditions for low-voltage RF applications. Consider the 115 mW power dissipation rating for thermal management within the small outline package. Verify that the required gain and noise figure align with the standard specifications provided in the official data sheet.

Part Context

This transistor belongs to the NE662 series of RF bipolar devices from CEL. It shares functional similarities with other members like the NE662M16-A but is distinguished by its specific packaging and intended use in low-noise, high-frequency environments. The series represents silicon-based solutions for microwave and millimeter-wave applications where size and performance are critical constraints.

Replacement Considerations

The NE662M16-A is a related part within the same product family. Verify pinout compatibility and exact electrical parameters against the target application requirements before substitution. Other equivalents may exist under different manufacturer naming conventions, such as those from NEC or Renesas, requiring careful datasheet comparison.