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The NE662M04-T2-A is an NPN silicon RF bipolar transistor designed for low-noise, high-gain amplification in X-band applications. It features a MiniMold-Flat-4 (M04) surface-mount package with four pins. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 3.3 V and an emitter-base voltage (VEBO) of 1.5 V. The device supports a continuous collector current of 35 mA and operates within a temperature range of -65°C to +150°C. It exhibits a DC current gain (hFE) maximum of 100 and a transition frequency (fT) of 25 GHz.
Verify component authenticity through authorized CEL or Renesas channels due to discontinuation status. Confirm datasheet revision R09DS0055EJ0200 Rev.2.00 matches physical markings. Request lot traceability documentation to ensure compliance with original manufacturing specifications before integration into production designs.
Select this component when designing X-band amplifiers requiring high transition frequency and low noise characteristics. Ensure the circuit design accommodates the 3.3 V maximum voltage rating and 35 mA current limit. Verify thermal management strategies align with the specified operating temperature range and power dissipation requirements for reliable long-term operation.
This part is manufactured by CEL, a business partner of Renesas Electronics Corporation. It corresponds to the NEC part number 2SC5508. The device belongs to the NE662M series of silicon RF transistors, specifically utilizing the M04 flat-lead package format common in microwave discrete components.
The NE662M04-T2-A is functionally equivalent to the NEC 2SC5508. Designers may consider these parts as direct substitutes if pin compatibility and electrical parameters match the existing schematic requirements.