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Product Detailed Parameters
- Description：RF TRANS NPN 3.3V 15GHZ SOT-343F
- Series：-
- Mfr：CEL
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：3.3V
- Frequency - Transition：15GHz
- Noise Figure (dB Typ @ f)：1.2dB @ 2GHz
- Gain：14dB
- Power - Max：190mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 2V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-343F
- Supplier Device Package：SOT-343F
- Grade：-
- Qualification：-
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Overview
The CEL NE663M04-A is an NPN silicon RF bipolar transistor designed for low-noise, high-gain amplification. It operates with a typical transition frequency (fT) of 15 GHz at a test frequency of 2 GHz. The device features a maximum collector-emitter voltage (VCEO) of 3.3 V and a maximum continuous collector current (Ic) of 100 mA. It exhibits a typical noise figure of 1.2 dB and a maximum available gain (MAG) of 14 dB under standard bias conditions. The component is housed in the M04 package, which corresponds to the SOT-343F surface-mount footprint.
Feature Summary
- Optimized for low-noise and high-gain amplification applications
- Utilizes silicon technology for reliable RF performance
- Designed for single-transistor discrete circuit integration
Applications
- Low-noise amplifier stages in wireless communication systems
- RF signal processing within cellular infrastructure
- Amplification modules for ISM band applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component when a balance between moderate gain and higher current handling is required compared to lower-current alternatives. Ensure the operating voltage remains within the 3.3 V limit and verify thermal management capabilities for the M04 package configuration.
Part Context
This part belongs to the CEL NE66x series of silicon RF transistors, specifically engineered for front-end components in wireless markets. It serves as a discrete alternative to MMIC solutions, offering designers flexibility in custom impedance matching and biasing networks for frequencies up to several gigahertz.
Replacement Considerations
The JEITA equivalent part number is 2SC5509. Verify pinout compatibility and thermal characteristics when substituting with other M04 packaged devices from different manufacturers.
