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The NE677M04-A is a silicon NPN RF bipolar transistor manufactured by CEL. It operates with a maximum collector-emitter voltage of 6 V and supports a continuous collector current of 50 mA. The device features a transition frequency (fT) of 15 GHz at 2 GHz test conditions, providing a typical noise figure of 1.7 dB and a maximum available gain of 16 dB. Power dissipation is rated at 205 mW. It is housed in an M04 plastic SMD package, equivalent to the SOT-343F form factor.
Verify component authenticity through authorized CEL distributors or certified suppliers. Confirm that the part matches the specified M04 package dimensions and electrical characteristics provided in the official datasheet. Ensure compliance with relevant RoHS directives before integration into final assemblies.
Select this component when designing circuits requiring a silicon NPN transistor with a 15 GHz transition frequency and low noise figure around 1.7 dB. The M04 package offers a compact footprint suitable for space-constrained PCB designs operating within the 2 to 6 GHz range.
This component belongs to the CEL Silicon Bipolar Transistors product line, specifically categorized under Single Transistors. It serves as a discrete solution for RF signal processing, complementing other CEL offerings such as GaAs FETs and MMIC amplifiers in wireless connectivity and optical markets.
The NE677M04-A is electrically equivalent to the NEC 2SC5751. Designers may consider the 2SC5751 as a direct substitute if sourcing from NEC/CEL channels, ensuring pinout compatibility with the M04/SOT-343F package.