NE677M04-T2-A

Overview

The NE677M04-T2-A is a silicon NPN RF bipolar transistor manufactured by CEL. It is designed for high-frequency applications and features a single configuration housed in an SOT-343 surface-mount package. Key electrical specifications include a continuous collector current of 50 mA and a power dissipation rating of 205 mW. The component is classified under RF Bipolar Transistors within the Transistors sub-category.

Feature Summary

• High-frequency operation capability
• NPN silicon technology construction
• Single configuration design

Applications

• RF amplifier circuits
• High-frequency signal processing
• Wireless communication systems

Procurement Notes

Verify availability status as the component is listed as obsolete or end-of-life. Confirm RoHS compliance details through official documentation. Check for valid replacement options if sourcing new units is not possible. Ensure the supplier provides authentic CEL products to avoid counterfeit risks.

Selection Notes

Select this component for designs requiring NPN RF bipolar transistors with specific current handling. Verify that the SOT-343 package fits the PCB layout constraints. Consider the 205 mW power dissipation limit during thermal analysis. Evaluate alternative parts if the NE677M04-T2-A is no longer available from distributors.

Part Context

This part belongs to the CEL RF Bipolar Transistor family, specifically utilizing silicon technology. It shares the M04 package style with other devices like the NE662M04-T2-A. The manufacturer CEL produces various discrete semiconductors for radio frequency applications.

Replacement Considerations

The 2SC5751-T2-A is documented as an alias for the NE677M04-T2-A. Verify pinout and electrical equivalence before substitution. Other similar RF transistors may require circuit redesign.