NE68030-T1-A

Overview

The NE68030-T1-A is an NPN silicon high-frequency transistor from the NE680 series, manufactured by California Eastern Laboratories (CEL). It is designed for low noise and high gain applications up to 6 GHz. The device features a gain bandwidth product of 10 GHz and operates with a maximum collector current of 35 mA. Key electrical characteristics include a noise figure of 1.7 dB at 2 GHz and 2.9 dB at 4 GHz under standard bias conditions. It utilizes a surface-mount package suitable for automated assembly.

Feature Summary

• High gain bandwidth product optimized for RF signal amplification
• Low noise figure performance in UHF and microwave frequency ranges
• Capable of operation at low voltage and low current levels

Applications

• Low noise amplifier stages in communication systems
• RF front-end modules requiring high gain
• Microwave circuit design operating up to 6 GHz

Procurement Notes

Verify component authenticity through authorized CEL distributors or certified secondary market suppliers. Confirm lot traceability and storage history to ensure junction temperature limits were not exceeded. Request fresh date codes if long-term reliability is critical for the application environment.

Selection Notes

Select this component when low noise and high gain are prioritized over high power handling. Ensure the design accommodates the 35 mA maximum collector current limit. Consider thermal resistance values for heat dissipation in the specific surface mount package used.

Part Context

This part belongs to the NE680 series of NPN epitaxial silicon transistors. The series includes various package options such as chip, micro-x, and plastic surface mount styles. These devices share common technology focused on sub-half-micrometer applications for low cost and high performance.

Replacement Considerations

Consult CEL sales office for details on recommended alternatives. The datasheet explicitly lists NE68035 and NE68039R as parts not recommended for new design.