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The CEL NE68033 is a silicon NPN bipolar transistor designed for RF applications up to 10 GHz. It features a typical transition frequency (fT) of 10 GHz and operates with a maximum collector-emitter voltage (VCEO) of 10 V and a maximum collector current (IC) of 35 mA. The device provides a typical noise figure of 1.8 dB at 2 GHz and a small-signal gain of 10 dB under standard test conditions. Packaged in the compact SOT-23 form factor, it is suitable for low-noise amplification and signal processing tasks within wireless communication systems.
Verify the specific manufacturer source when sourcing this component, as California Eastern Laboratories (CEL) products may be distributed through authorized channels or acquired via cross-reference tools. Confirm that the received part matches the original JEITA equivalent specifications and package dimensions provided in official documentation before integration into designs.
Select the NE68033 for designs requiring a balance of moderate gain and low noise in the UHF to microwave range. Ensure biasing circuits support the specified 35 mA maximum collector current and 10 V breakdown voltage. Consider the SOT-23 footprint constraints during PCB layout to maintain thermal and electrical performance standards.
This component belongs to the CEL silicon bipolar transistor family, which includes various NPN devices tailored for RF and microwave frequencies. The NE68033 serves as a discrete solution for amplification, distinct from monolithic microwave integrated circuits (MMICs) or GaAs FETs offered by the same manufacturer.
The datasheet lists the 2SC3585 as the JEITA equivalent part number. Designers should verify pinout compatibility and electrical parameter alignment with the 2SC3585 if substituting this component in existing hardware configurations.