NE68033-T1B-R44-A

NE68033-T1B-R44-A

  • Description:RF TRANS NPN 10V 10GHZ SOT-23-3
  • Series:-

SKU:0d5b3e5dac6c Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 10GHZ SOT-23-3
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.8dB @ 2GHz
  • Gain:9dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 6V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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NE68033-T1B-R44-A

Overview

The NE68033-T1B-R44-A is an NPN silicon epitaxial transistor designed for low-noise and small signal amplifiers in the VHF to UHF bands. It utilizes a direct nitride passivated base surface process to achieve excellent noise figures at high current values, providing wide dynamic range. Key electrical parameters include a collector-to-emitter voltage of 10 V, a collector current rating of 35 mA, and a total power dissipation of 200 mW. At 2.0 GHz with VCE = 6 V and IC = 10 mA, it delivers a typical insertion gain of 8.0 dB and a maximum available gain of 10 dB. The device features a typical noise figure of 1.8 dB and a gain bandwidth product of 10 GHz.

Feature Summary

  • Employs a direct nitride passivated base surface process for superior noise performance at elevated currents.
  • Provides high associated gain and wide dynamic range suitable for sensitive RF front-end applications.

Applications

  • Low-noise amplifier stages in VHF band receivers
  • Small signal amplification in UHF band communication systems
  • RF signal conditioning in test and measurement equipment

Procurement Notes

Verify the specific hFE classification suffix R44 corresponds to the required DC current gain range of 80 to 160. Confirm that the package type and pinout match the design requirements for the intended circuit layout. Ensure compliance with the manufacturer's quality grade recommendations for the target application environment.

Selection Notes

Select this component when a low noise figure near 1.8 dB at 2.0 GHz is critical. The R44 binning indicates a moderate DC current gain range, which may influence biasing network design compared to higher gain variants. Evaluate thermal management capabilities as the device dissipates up to 200 mW under operating conditions.

Part Context

This part is part of the NE68033 / 2SC3585 family originally developed by California Eastern Laboratories (CEL) and later associated with Renesas Electronics. The datasheet identifies it as a microwave low noise amplifier transistor utilizing proprietary fabrication techniques for enhanced high-frequency performance.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source documentation. Designers should consult official replacement guides or contact the manufacturer for validated alternatives.

NE68033-T1B-R44-ANE68033-T1B-R44-A

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