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The NE68033-T1B-R44-A is an NPN silicon epitaxial transistor designed for low-noise and small signal amplifiers in the VHF to UHF bands. It utilizes a direct nitride passivated base surface process to achieve excellent noise figures at high current values, providing wide dynamic range. Key electrical parameters include a collector-to-emitter voltage of 10 V, a collector current rating of 35 mA, and a total power dissipation of 200 mW. At 2.0 GHz with VCE = 6 V and IC = 10 mA, it delivers a typical insertion gain of 8.0 dB and a maximum available gain of 10 dB. The device features a typical noise figure of 1.8 dB and a gain bandwidth product of 10 GHz.
Verify the specific hFE classification suffix R44 corresponds to the required DC current gain range of 80 to 160. Confirm that the package type and pinout match the design requirements for the intended circuit layout. Ensure compliance with the manufacturer's quality grade recommendations for the target application environment.
Select this component when a low noise figure near 1.8 dB at 2.0 GHz is critical. The R44 binning indicates a moderate DC current gain range, which may influence biasing network design compared to higher gain variants. Evaluate thermal management capabilities as the device dissipates up to 200 mW under operating conditions.
This part is part of the NE68033 / 2SC3585 family originally developed by California Eastern Laboratories (CEL) and later associated with Renesas Electronics. The datasheet identifies it as a microwave low noise amplifier transistor utilizing proprietary fabrication techniques for enhanced high-frequency performance.
Publicly confirmed substitute part numbers are not provided in the source documentation. Designers should consult official replacement guides or contact the manufacturer for validated alternatives.