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The CEL NE68118-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 10V and a continuous collector current rating of 65mA. The device operates up to a maximum frequency of 9GHz with a power dissipation capacity of 150mW. Packaged in a surface-mount SOT-343 (SC-82A) case, it utilizes silicon technology for reliable performance in small outline rectangular plastic packages.
Verify the specific manufacturer source, as this component has been associated with multiple vendors including NEC and Renesas historically. Confirm that the supplier provides official documentation from CEL or its successor entity Microchip Technology. Ensure the part number matches the exact suffix T1-A to guarantee correct packaging and electrical specifications. Request datasheets to validate current production status and lifecycle information before finalizing orders.
Select this component when designing circuits requiring NPN transistors with 10V breakdown and 65mA current handling at frequencies up to 9GHz. The SOT-343 package is appropriate for space-constrained designs needing surface-mount integration. Consider thermal management requirements given the 150mW power dissipation limit. Evaluate alternative suppliers if supply chain stability is a concern due to the component's historical association with various manufacturers.
This component belongs to the family of RF bipolar transistors originally developed by California Eastern Laboratories (CEL). Following corporate acquisitions, these products are now managed under Microchip Technology. The NE68118 series represents silicon-based solutions for high-frequency applications, maintaining compatibility with established RF design methodologies while offering modern surface-mount packaging options for contemporary electronic systems.
Public confirmed substitute part numbers: NE68119-T1-A.