NE68119-T1

NE68119-T1

$0.74
  • Description:RF TRANS NPN 10V 7GHZ 3-MINI
  • Series:-

SKU:cffda9e27ba8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 7GHZ 3-MINI
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
  • Gain:10dB ~ 14dB
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 7mA, 3V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-523
  • Supplier Device Package:3-SuperMiniMold (19)
  • Grade:-
  • Qualification:-

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NE68119-T1

Overview

The CEL NE68119-T1 is an NPN silicon high-frequency transistor from the NE681 series, designed for low noise and high gain amplifier applications. It operates in the S-band with a gain bandwidth product (fT) of 7.0 GHz at VCE = 3 V, IC = 7 mA. The device features a minimum noise figure of 1.4 dB at 1 GHz and 1.8 dB at 2 GHz under VCE = 8 V, IC = 7 mA conditions. Associated gain reaches 13.5 dB at 1 GHz and 9 dB at 2 GHz. Maximum ratings include a collector-emitter voltage (VCEO) of 10 V, collector current (IC) of 65 mA, and total power dissipation (PT) of 100 mW. It utilizes a plastic surface mount package.

Feature Summary

  • Optimized for simultaneous low noise and high gain performance using a single matching point
  • Suitable for amplifier applications up to 4 GHz frequency range
  • Low cost plastic surface mount packaging options available

Applications

  • Low noise amplifiers
  • High gain amplifiers
  • S-band RF circuits

Procurement Notes

Verify the specific package outline number associated with the -T1 suffix against official datasheets, as the NE681 series includes multiple package styles such as chip, Micro-X, and various SOT types. Confirm that the component meets the required electrical specifications for your design, particularly regarding thermal resistance and power dissipation limits. Ensure compatibility with your manufacturing process for the selected surface mount package type.

Selection Notes

Select this component when designing circuits requiring high gain and low noise figures in the S-band or up to 4 GHz. Consider the trade-off between noise figure and gain based on the biasing conditions provided in the typical noise parameters tables. Evaluate the thermal constraints given the 100 mW power dissipation limit and ensure adequate heat sinking if operating near maximum ratings.

Part Context

The NE68119-T1 belongs to the NEC/CEL NE681 series of NPN epitaxial silicon transistors. This series is engineered for low noise, high gain, and low cost amplifier applications. The NE68119 variant specifically offers a gain bandwidth product of 7.0 GHz and is packaged in a plastic surface mount style, distinct from the chip or Micro-X versions also available in the series.

Replacement Considerations

Direct replacements within the same series include NE68100, NE68118, NE68130, NE68133, NE68135, NE68139, and NE68139R. Verify electrical characteristics and package dimensions before substitution, as performance metrics like fT and noise figure vary across the series.

NE68119-T1NE68119-T1
$0.74
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