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The NE68130-T1-A is an NPN epitaxial silicon transistor from the NEC/CEL NE681 series, packaged in a SOT-323 style outline. It is engineered for low noise and high gain amplifier applications operating up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 7.0 GHz at VCE=3V, IC=7mA, and a typical noise figure of 1.5 dB at 1 GHz. The device supports a maximum collector current of 65 mA and total power dissipation of 150 mW, with a junction temperature rating of 150°C.
Verify the specific suffix T1-A against official documentation to confirm tape-and-reel packaging configuration. Confirm that the component source matches the original manufacturer specifications for the NE681 series. Ensure compatibility with the designated SOT-323 footprint during procurement validation.
Select this component when designing circuits requiring operation near 4 GHz with minimal noise degradation. Evaluate the trade-off between the 150 mW power dissipation limit and thermal management requirements. Consider the 65 mA collector current capability relative to the intended load conditions and biasing network design.
This part belongs to the NE681 series of NPN silicon transistors originally developed by NEC. The series offers various package options including chip, Micro-X, and several SOT styles. The NE68130 specifically utilizes the SOT-323 outline, providing a compact solution for high-frequency applications compared to larger package variants within the same family.
Cross-reference with other NE681 series variants such as NE68119 or NE68133 if package constraints differ. Verify pinout compatibility and electrical parameter overlaps before substituting. Consult official datasheets for specific performance deviations between package types.