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The NE68130-T1-R34-A is an NPN epitaxial silicon transistor from the NEC/CEL NE681 series, housed in a SOT-323 style package (outline 30). It is engineered for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product of 7.0 GHz at VCE=3V/IC=7mA and a noise figure of 1.5 dB at 1 GHz under standard bias conditions. The device supports a maximum collector current of 65 mA and operates with a junction temperature rating of 150°C.
Verify the specific suffix -T1-R34-A against the manufacturer's official documentation to confirm tape and reel packaging details. Ensure the component matches the SOT-323 outline 30 physical dimensions. Cross-reference the datasheet version date to confirm parameter validity before finalizing procurement specifications.
Select this component when designing circuits requiring high frequency performance up to 4 GHz with minimal signal degradation. Evaluate the trade-off between noise figure and associated gain based on the required operating frequency. Confirm that the thermal resistance and power dissipation limits align with the system's heat management capabilities.
This part belongs to the NE681 series of NPN silicon transistors originally developed by NEC and now distributed by CEL. The series offers various package options including chip, Micro-X, and several SOT styles. The NE68130 specifically utilizes the SOT-323 form factor, providing a compact solution for dense circuit board layouts while maintaining high-frequency reliability.
Consult the official datasheet for direct pin-compatible alternatives within the NE681 series, such as the NE68133 or NE68135. Verify that any substitute maintains the required SOT-323 package outline and meets the specific gain bandwidth and noise figure requirements for the target application.