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The NE68133-T1B-A is an NPN epitaxial silicon high-frequency transistor from the CEL NE681 series, housed in a surface-mount package. It is engineered for low noise and high gain amplifier applications operating up to 4 GHz. Key electrical characteristics include a gain bandwidth product of 9.0 GHz, a minimum noise figure of 1.2 dB at 1 GHz, and an associated gain of 15 dB at 1 GHz. The device supports a collector current of up to 65 mA with a maximum collector-emitter voltage of 10 V.
Verify the specific suffix -T1B-A against official datasheets to confirm tape-and-reel packaging and binning specifications. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the ordering code matches the exact package outline and marking codes provided by the manufacturer.
Select this component when designing circuits requiring high gain bandwidth and low noise figures in the UHF and microwave ranges. Consider the thermal resistance and power dissipation limits relative to your heat sinking strategy. Evaluate the S-parameter data for impedance matching network design to optimize stability and gain at your specific operating frequency.
This part belongs to the NE681 series of NPN silicon transistors manufactured by California Eastern Laboratories (CEL). The series includes various package options such as chip, Micro-X, and several SOT styles, all sharing similar core electrical characteristics optimized for RF amplification.
Direct replacements within the same series include NE68133 variants. Cross-manufacturer equivalents may exist but require verification of pinout compatibility, gain bandwidth product, and noise figure specifications.