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Product Detailed Parameters
- Description：RF TRANS NPN 10V 9GHZ SOT-23-3
- Series：-
- Mfr：CEL
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1.2dB @ 1GHz
- Gain：13dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 8V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The NE68133-T1B-R33-A is an NPN silicon high-frequency transistor from the CEL NE681 series, housed in a SOT-23 (33) surface-mount package. It features a gain bandwidth product of 9.0 GHz and low noise figures of 1.2 dB at 1 GHz and 1.6 dB at 2 GHz. The device provides associated gains of 13 dB at 1 GHz and 12 dB at 2 GHz under standard bias conditions. Designed for low-noise amplifier applications up to 4 GHz, it allows simultaneous optimization of noise and gain through a single matching point.
Feature Summary
- NPN epitaxial silicon construction optimized for low noise and high gain performance
- Single matching point capability to simultaneously achieve low noise figure and high gain
- Suitable for amplifier applications operating up to 4 GHz frequency range
Applications
- Low noise amplifier circuits
- High frequency signal amplification
- RF front-end modules
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package outline matches the SOT-23 style designated as 33. Ensure the part number suffix corresponds to the correct reel or tape configuration if applicable. Cross-reference with authorized distributor catalogs to validate supply chain integrity before procurement.
Selection Notes
Select this component when designing circuits requiring high gain bandwidth and minimal noise addition in the UHF and microwave bands. Evaluate thermal resistance and power dissipation limits relative to the specific PCB layout and ambient temperature conditions. Consider the SOT-23 package constraints for high-frequency impedance matching networks.
Part Context
This part belongs to the NEC/CEL NE681 series of NPN silicon transistors. The series includes various package options such as chip, Micro-X, and multiple plastic surface mount styles like SOT-343, SOT-143, and SOT-23. All variants share similar electrical characteristics tailored for low-cost, high-performance amplifier designs.
Replacement Considerations
Direct substitutes within the same family include other NE681 series variants with different package outlines, such as NE68135 or NE68139, provided the physical footprint and pinout compatibility are verified for the specific application design.
