SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CEL NE68139-A is an NPN epitaxial silicon high-frequency transistor from the NE681 series, packaged in SOT-143 style. It is designed for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 9.0 GHz at VCE = 8 V, IC = 20 mA. The device supports a collector current of 65 mA, with absolute maximum ratings of 20 V for collector-to-base voltage and 10 V for collector-to-emitter voltage.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with RoHS directives if applicable to the specific production batch. Request full datasheets and test reports prior to finalizing procurement agreements.
Select this component when designing circuits requiring high gain bandwidth products near 9 GHz. Consider the SOT-143 package outline for space-constrained PCB layouts. Evaluate thermal resistance and power dissipation limits against the expected operating junction temperature to ensure reliability under continuous load conditions.
This part belongs to the NEC/CEL NE681 series of NPN silicon transistors. The series includes various package options such as chip, Micro-X, SOT-23, SOT-323, SOT-343, and SOT-143R. The NE68139 specifically utilizes the SOT-143 style package, distinguishing it from other series members by its physical form factor while maintaining similar RF performance metrics.
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.