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The NE68139R-T1-A is an NPN epitaxial silicon transistor from the NEC/CEL NE681 series, packaged in SOT-143R. It is designed for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 9.0 GHz at VCE = 8 V, IC = 20 mA. The device exhibits a typical noise figure of 1.6 dB at 2 GHz and an associated gain of 12 dB at the same frequency under VCE = 8 V, IC = 7 mA conditions. Absolute maximum ratings specify a collector-to-base voltage of 20 V, collector-to-emitter voltage of 10 V, and total power dissipation of 200 mW.
Verify the specific suffix 'R-T1-A' against the manufacturer's current datasheet to confirm tape-and-reel packaging and exact binning. Ensure the component source matches the official CEL or NEC documentation to avoid counterfeit parts. Cross-reference the EIAJ registered number 2SC4094 for equivalent identification if required by your supply chain standards.
Select this component when a balance of low noise figure and high gain is required in a compact surface-mount package. The SOT-143R form factor is appropriate for space-constrained designs operating up to 4 GHz. Consider the thermal resistance and power dissipation limits during biasing to ensure stable operation within the specified junction temperature range.
This part belongs to the NE681 series of NPN silicon transistors manufactured by NEC (now CEL). The series includes various package options such as chip, Micro-X, SOT-323, SOT-23, and SOT-143 styles. The NE68139 variant specifically utilizes the SOT-143 package outline, while the 'R' designation indicates the SOT-143R style. These devices are engineered for cost-effective high-frequency performance.
Direct pin-compatible replacements within the same family include NE68135 and NE68139. Verify that substitute components meet the specific fT and noise figure requirements for your application frequency. Check absolute maximum ratings to ensure compatibility with existing bias circuits.