NE68139R-T1-A

NE68139R-T1-A

$0.80
  • Description:RF TRANS NPN 10V 9GHZ SOT-143R
  • Series:-

SKU:a41131baf934 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 10V 9GHZ SOT-143R
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:9GHz
  • Noise Figure (dB Typ @ f):1.2dB ~ 2dB @ 1GHz
  • Gain:13.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 7mA, 3V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-143R
  • Supplier Device Package:SOT-143R
  • Grade:-
  • Qualification:-

Download product information

NE68139R-T1-A

Overview

The NE68139R-T1-A is an NPN epitaxial silicon transistor from the NEC/CEL NE681 series, packaged in SOT-143R. It is designed for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 9.0 GHz at VCE = 8 V, IC = 20 mA. The device exhibits a typical noise figure of 1.6 dB at 2 GHz and an associated gain of 12 dB at the same frequency under VCE = 8 V, IC = 7 mA conditions. Absolute maximum ratings specify a collector-to-base voltage of 20 V, collector-to-emitter voltage of 10 V, and total power dissipation of 200 mW.

Feature Summary

  • High gain bandwidth product enabling operation in microwave frequency ranges
  • Low noise figure suitable for sensitive receiver front-end stages
  • Single matching point design capability for simultaneous low noise and high gain optimization

Applications

  • Low noise amplifiers for wireless communication systems
  • RF signal conditioning in cellular infrastructure
  • Microwave receiver input stages

Procurement Notes

Verify the specific suffix 'R-T1-A' against the manufacturer's current datasheet to confirm tape-and-reel packaging and exact binning. Ensure the component source matches the official CEL or NEC documentation to avoid counterfeit parts. Cross-reference the EIAJ registered number 2SC4094 for equivalent identification if required by your supply chain standards.

Selection Notes

Select this component when a balance of low noise figure and high gain is required in a compact surface-mount package. The SOT-143R form factor is appropriate for space-constrained designs operating up to 4 GHz. Consider the thermal resistance and power dissipation limits during biasing to ensure stable operation within the specified junction temperature range.

Part Context

This part belongs to the NE681 series of NPN silicon transistors manufactured by NEC (now CEL). The series includes various package options such as chip, Micro-X, SOT-323, SOT-23, and SOT-143 styles. The NE68139 variant specifically utilizes the SOT-143 package outline, while the 'R' designation indicates the SOT-143R style. These devices are engineered for cost-effective high-frequency performance.

Replacement Considerations

Direct pin-compatible replacements within the same family include NE68135 and NE68139. Verify that substitute components meet the specific fT and noise figure requirements for your application frequency. Check absolute maximum ratings to ensure compatibility with existing bias circuits.

NE68139R-T1-ANE68139R-T1-A
$0.80
Buy Now