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The NE68139R-T1 is an NPN epitaxial silicon transistor from the NEC/CEL NE681 series, packaged in SOT-143R. It is designed for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 9.0 GHz at VCE=8V, IC=20mA. The device features a collector-to-base voltage (VCBO) of 20V, collector-to-emitter voltage (VCEO) of 10V, and emitter-to-base voltage (VEBO) of 1.5V. Maximum collector current is 65mA with total power dissipation of 200mW. Noise figure is typically 1.67 dB at 1 GHz and 2.15 dB at 2 GHz under specific bias conditions.
Verify component authenticity through authorized CEL distributors. Confirm package marking matches SOT-143R standards. Check datasheet revision history for parameter updates. Ensure storage conditions comply with moisture sensitivity levels. Validate supplier documentation against official NEC/CEL specifications.
Select based on required operating frequency and noise performance needs. Compare fT and noise figure specifications against circuit requirements. Consider thermal resistance and power dissipation limits for heat management. Evaluate packaging compatibility with PCB layout constraints. Verify biasing conditions match typical application curves.
The NE681 series includes multiple package variants such as chip, Micro-X, SOT-343, SOT-143, SOT-23, and Ultra Super Mini Mold. The NE68139R-T1 specifically utilizes the SOT-143R surface mount package. This series is engineered for cost-effective solutions requiring high frequency performance.
Consult CEL sales office for details on recommended alternatives. Cross-reference with other NE681 series packages if form factor allows. Verify electrical parameters match original design requirements before substitution.