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The CEL NE68519-T1 is an NPN silicon high-frequency transistor from the NEC NE685 series, housed in a 3-pin Ultra Super Mini Mold package (Outline 19). It features a gain bandwidth product of 12 GHz and a minimum noise figure of 1.5 dB at 2.0 GHz. Absolute maximum ratings include a collector-to-emitter voltage of 6 V, collector current of 30 mA, and total power dissipation of 125 mW. The device operates with low voltage and current, making it suitable for portable wireless communications.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches Outline 19. Ensure handling procedures account for ESD sensitivity as noted in documentation. Validate electrical parameters against test conditions specified in the datasheet before integration.
Select this component for designs requiring high frequency performance up to 2.4 GHz with low noise characteristics. Consider the 6 V collector-to-emitter voltage limit and 30 mA maximum collector current when designing bias circuits. Evaluate thermal resistance values for heat dissipation requirements in the specific application environment.
The NE68519-T1 belongs to the NEC NE685 series of surface mount NPN silicon transistors manufactured by California Eastern Laboratories (CEL). This family includes variants like NE68518, NE68530, NE68533, and NE68539, each offering different package outlines and slight parameter variations while maintaining the core high-frequency, low-noise profile.
Consult manufacturer documentation for direct substitutes. The datasheet notes that certain parts like NE68530, NE68533, and NE68539 are not recommended for new design; verify availability and equivalence of alternative components carefully.