NE68539-T1-A

Overview

The NE68539-T1-A is an NPN high-frequency bipolar RF transistor manufactured by CEL. It operates in a surface-mount SOT-143 package. Key electrical parameters include a collector-emitter breakdown voltage of 6V and a maximum collector current of 30mA. The device supports a transition frequency of 12GHz with a maximum power dissipation of 180mW. It features a typical noise figure specified at its operating frequency and a DC current gain of 75 at 10mA collector current and 3V collector-emitter voltage. The junction temperature rating reaches 150°C.

Feature Summary

• High-frequency operation capability up to 12GHz for RF applications
• Low noise performance suitable for sensitive signal processing
• Compact surface-mount SOT-143 packaging for space-constrained designs

Applications

• RF amplifier stages in communication systems
• High-frequency signal processing circuits
• Low-noise front-end modules

Procurement Notes

Verify the specific ordering suffix T-1-A against the manufacturer's official documentation to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status through the latest datasheet revision. Check for obsolete part status indicators on distributor platforms, as availability may be limited. Ensure the supplier provides genuine components from authorized channels to prevent counterfeit risks.

Selection Notes

Select this component when designing circuits requiring high-frequency NPN amplification with low noise figures. The 6V breakdown voltage limits suitability for high-voltage applications. Consider the 180mW power dissipation limit for thermal management. The SOT-143 package requires appropriate PCB layout considerations for RF impedance matching and heat dissipation.

Part Context

This part belongs to CEL's portfolio of RF bipolar transistors designed for high-frequency applications. It serves as a specialized component for radio frequency engineering tasks where size and performance are critical constraints.