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The NE68719-T1 is an NPN RF bipolar transistor manufactured by CEL. It features a maximum collector-emitter breakdown voltage of 3V and supports a continuous collector current of 30mA. The device operates up to a frequency of 11GHz with a power dissipation rating of 90mW. It is housed in a surface-mount 3-SuperMiniMold (19) package, designed for high-frequency applications requiring compact form factors.
Verify component authenticity through authorized distributors. Confirm package integrity upon receipt. Check datasheet revisions for updated electrical characteristics. Ensure storage conditions meet semiconductor specifications. Validate compatibility with existing circuit designs before integration.
Evaluate thermal management requirements due to 90mW power dissipation limit. Consider 3V breakdown voltage constraints in circuit design. Assess 11GHz performance needs against application bandwidth. Review SuperMiniMold (19) footprint compatibility with PCB layout. Compare current handling capabilities with system load requirements.
This component belongs to CEL's portfolio of RF bipolar transistors. It serves as a specialized active device for high-frequency analog circuits. The SuperMiniMold (19) package distinguishes it from standard TO-236 or SOT-523 variants found in related product lines.
No public confirmed substitute part numbers are available.