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The CEL NE68730-T1 is a surface mount NPN silicon high frequency transistor designed for low cost, low noise applications. It operates at frequencies up to 2.4 GHz with excellent performance at low voltage and current levels. The device features a gain bandwidth product (fT) of 9 to 11 GHz at VCE = 2V/IC = 20mA and a minimum noise figure (NFMIN) of 1.3 to 2.0 dB at 2.0 GHz. It provides an insertion power gain of 7 to 8.5 dB and a forward current gain (hFE) of 70 to 140. The collector current rating is 30 mA with a total power dissipation of 90 mW.
Verify the specific suffix T1 against official documentation to confirm tape and reel packaging configuration. Confirm that the NE68730 part number is acceptable for new designs or requires sales office consultation as some series variants are not recommended for new design.
Select this component when low noise figure and high gain are required at 2.0 GHz with limited supply voltage. Ensure the SOT-323 package outline meets the PCB layout constraints. Consider the thermal resistance values for heat dissipation requirements in free air conditions.
The NE68730 belongs to the NE687 series of NPN epitaxial silicon transistors manufactured by California Eastern Laboratories (CEL). This series includes multiple package styles such as SOT-343, SOT-23, SOT-143, and 3 Pin Ultra Super Mini Mold. The NE68730 specifically utilizes the SOT-323 style package outline.
Publicly confirmed substitute part numbers are not available in the provided datasheet.