NE68819-T1-A

Overview

The NE68819-T1-A is a surface mount NPN silicon high frequency transistor from the NE688 series. It features a minimum noise figure of 1.5 dB at 2.0 GHz with VCE = 3V and IC = 7 mA. The gain bandwidth product reaches 9 GHz under VCE = 3V and IC = 20 mA conditions. Absolute maximum ratings include a collector current of 100 mA, collector-to-base voltage of 9 V, and collector-to-emitter voltage of 6 V. Total power dissipation is rated at 125 mW in free air.

Feature Summary

• Designed for low cost amplifier and oscillator applications
• Provides wide dynamic range and excellent linearity
• Suitable for oscillator applications up to 5 GHz

Applications

• Low noise amplification
• RF oscillator circuits
• High frequency signal processing

Procurement Notes

Verify the specific suffix T1-A against manufacturer documentation to confirm tape and reel packaging details. Confirm that the device meets all ESD handling precautions as specified in the datasheet notes. Ensure the ordering code matches the exact package outline number 19.

Selection Notes

Select this component when low phase noise distortion and high gain are required for frequencies up to 5 GHz. Consider the 125 mW power dissipation limit and thermal resistance values for heat management. Verify biasing requirements align with the typical scattering parameters provided for optimal performance.

Part Context

This part belongs to the NEC/CEL NE688 series of NPN epitaxial silicon transistors. The series includes variants such as NE68818, NE68830, NE68833, and NE68839. These devices share similar electrical characteristics but differ in package styles and specific performance optimizations.

Replacement Considerations

Check for direct equivalents within the NE688 family. Verify pinout compatibility if substituting with other package styles like SOT-343 or SOT-23 variants.