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The NE68830-A is a surface mount NPN silicon high frequency transistor from the California Eastern Laboratories (CEL) NE688 series. It is designed for low cost amplifier and oscillator applications, offering low noise figures, high gain, and high current capability. The device features a large absolute maximum collector current of 100 mA and supports low voltage operation. Key electrical parameters include a minimum noise figure of 1.7 dB at 2.0 GHz with VCE=1V/IC=3mA, and a gain bandwidth product ranging from 4 to 5 GHz depending on bias conditions. The component utilizes the SOT-323 package style.
Verify the specific suffix 'A' against the official datasheet to confirm package or material variations. Confirm availability status as some NE688 variants are marked for new design restriction. Ensure ESD handling procedures are followed during assembly due to device sensitivity.
Select this component when a high-frequency NPN transistor with low noise and high current drive is required in a small surface mount footprint. Compare noise figure and gain bandwidth requirements against other NE688 package options like NE68818 or NE68819 to ensure optimal performance for the specific bias conditions.
The NE68830-A belongs to the broader NE688 series of NPN epitaxial silicon transistors manufactured by CEL. This family includes multiple package styles such as SOT-143, SOT-343, and SOT-23, all sharing similar core electrical characteristics but differing in thermal resistance and physical dimensions.
Consult the manufacturer for alternative part numbers within the NE688 series or equivalent high-frequency NPN transistors. Verify pinout compatibility and thermal resistance specifications before substituting.