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The NE851M13-T3-A is an NPN silicon RF transistor designed for high-frequency low-noise applications. It operates within a collector-to-emitter voltage (VCEO) of 5.5 V and a collector current (IC) limit of 100 mA, with total power dissipation rated at 140 mW. The device features a gain bandwidth product (fT) ranging from 3.0 to 6.5 GHz depending on bias conditions, and exhibits a typical noise figure of 1.9 dB at 2 GHz. Packaged in a 3-pin lead-less minimold format, it offers low phase distortion and supports DC current gains (hFE) between 100 and 145.
Verify the specific ordering suffix '-T3-A' corresponds to the reel supply form containing 10 kpcs per reel with Pin 2 (Base) facing the perforation side. Confirm that the component requires electrostatic discharge precautions during handling due to sensitivity. Ensure the procurement documentation references the correct datasheet number PU10085EJ02V0DS for technical specifications.
Select this component when designing circuits requiring low phase distortion and minimal noise figures at frequencies up to several gigahertz. The device is appropriate for low-voltage operation scenarios where a compact surface-mount footprint is necessary. Evaluate the trade-off between the 140 mW power dissipation limit and the required thermal management capabilities of the printed circuit board layout.
This part is functionally equivalent to the 2SC5801 designation. It belongs to the category of NPN silicon RF transistors intended for high-frequency operations. The manufacturer provides both non-reel evaluation samples (50 pcs) and bulk reel quantities (10 kpcs/reel) under different ordering suffixes.
The 2SC5801 serves as a direct functional equivalent part number for this component. Verify pinout compatibility and electrical parameter alignment before substitution in existing designs.