NE85633-A

NE85633-A

  • Description:RF TRANS NPN 12V 7GHZ
  • Series:-

SKU:33d0bc1d5b3f Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 7GHZ
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 1GHz
  • Gain:11.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:-
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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NE85633-A

Overview

The NE85633 is an NPN silicon epitaxial RF transistor designed for microwave low-noise amplification. It operates in the Ultra High Frequency band with a collector-emitter voltage of 12 V and a maximum collector current of 100 mA. The device provides a typical noise figure of 1.1 dB and a gain-bandwidth product of 7 GHz at 1 GHz frequency. Total power dissipation is rated at 200 mW, with a junction temperature limit of 150 °C. It is housed in a 3-pin Minimold package.

Feature Summary

  • Optimized for low noise and high gain performance in microwave applications
  • High power gain capability suitable for amplifier stages
  • Designed specifically for VHF, UHF, and CATV band operations

Applications

  • Microwave low-noise amplifiers
  • VHF and UHF signal processing circuits
  • CATV band amplification systems

Procurement Notes

Verify component authenticity through authorized channels as this part is subject to phase-out procedures. Confirm specific ordering suffixes such as -T1B or -A against current manufacturer documentation to ensure correct packaging and lead-free status. Request updated datasheets directly from Renesas Electronics or California Eastern Laboratories distributors to validate current availability and revision history before finalizing procurement plans.

Selection Notes

Select the NE85633 when designing circuits requiring low noise figures around 1.1 dB at 1 GHz. Ensure biasing conditions match the specified test parameters of VCE = 10 V and IC = 7 mA for optimal noise performance. Consider the 200 mW power dissipation limit and thermal management requirements for ambient temperatures up to +150 °C. Verify hFE classification ranks if DC gain consistency is critical for the application design.

Part Context

The NE85633 is functionally equivalent to the 2SC3356 series manufactured by NEC/Renesas. Both parts share identical electrical characteristics and pin configurations within the 3-pin Minimold package. The NE85633 designation reflects its origin from California Eastern Laboratories, which was acquired by Renesas Electronics. This component serves as a direct replacement for legacy designs utilizing the 2SC3356.

Replacement Considerations

Direct substitutes include the 2SC3356 and 2SC3356-A. Verify that replacement units match the required hFE ranking (Q, Y, or R) and package type (Minimold). Check for Pb-Free compliance if environmental regulations require it, corresponding to the -T1B suffix variants.

NE85633-ANE85633-A

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