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The NE85633-R23-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It utilizes a 3-pin Minimold package and operates with a collector-to-emitter voltage of 12 V and a maximum total power dissipation of 200 mW. The device achieves a transition frequency (fT) of 7 GHz, providing high gain-bandwidth performance. At 1 GHz, it delivers a typical noise figure of 1.1 dB and a maximum available power gain of 13 dB under standard bias conditions.
Verify component authenticity through authorized channels as this part is marked as phase-out by the manufacturer. Confirm that the R23 suffix corresponds to the required hFE classification range before finalizing orders. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to device sensitivity.
Select this component when designing circuits requiring a balance of low noise and high gain at 1 GHz frequencies. Verify that the operating current remains within the specified limits to maintain the rated noise figure. Check the specific hFE binning requirements against the R23 marking to ensure compatibility with the intended bias network design.
This component belongs to the NE85633 series manufactured by CEL, a business partner of Renesas Electronics Corporation. The datasheet indicates a phase-out status for the product line. The R23 ordering suffix specifically denotes the DC current gain (hFE) ranking, distinguishing it from other variants like R24 or R25 which offer different gain ranges.
Publicly confirmed substitute part numbers are not provided in the official documentation. Designers should consult the manufacturer's sales office for potential end-of-life alternatives or updated product recommendations.