NE85633-R23-A

NE85633-R23-A

  • Description:RF TRANS NPN 12V 7GHZ SOT-23-3
  • Series:-

SKU:7e42da9709d2 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 12V 7GHZ SOT-23-3
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 1GHz
  • Gain:11.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

Download product information

NE85633-R23-A

Overview

The NE85633-R23-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It utilizes a 3-pin Minimold package and operates with a collector-to-emitter voltage of 12 V and a maximum total power dissipation of 200 mW. The device achieves a transition frequency (fT) of 7 GHz, providing high gain-bandwidth performance. At 1 GHz, it delivers a typical noise figure of 1.1 dB and a maximum available power gain of 13 dB under standard bias conditions.

Feature Summary

  • Engineered for low-noise applications in the microwave spectrum
  • Provides high power gain suitable for amplifier stages
  • Utilizes a compact 3-pin Minimold surface-mount package

Applications

  • Microwave low-noise amplification circuits
  • RF signal processing systems
  • Communication equipment front-ends

Procurement Notes

Verify component authenticity through authorized channels as this part is marked as phase-out by the manufacturer. Confirm that the R23 suffix corresponds to the required hFE classification range before finalizing orders. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to device sensitivity.

Selection Notes

Select this component when designing circuits requiring a balance of low noise and high gain at 1 GHz frequencies. Verify that the operating current remains within the specified limits to maintain the rated noise figure. Check the specific hFE binning requirements against the R23 marking to ensure compatibility with the intended bias network design.

Part Context

This component belongs to the NE85633 series manufactured by CEL, a business partner of Renesas Electronics Corporation. The datasheet indicates a phase-out status for the product line. The R23 ordering suffix specifically denotes the DC current gain (hFE) ranking, distinguishing it from other variants like R24 or R25 which offer different gain ranges.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the official documentation. Designers should consult the manufacturer's sales office for potential end-of-life alternatives or updated product recommendations.

NE85633-R23-ANE85633-R23-A

Click on the inquiry