NE85633-T1B-A

Overview

The NE85633-T1B-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It features a 3-pin Minimold package with a collector-to-emitter voltage of 12 V and a maximum total power dissipation of 200 mW. The device achieves a transition frequency of 7 GHz, ensuring high-frequency performance. At VCE = 10 V and IC = 7 mA (f = 1 GHz), it provides a typical noise figure of 1.1 dB and a DC current gain of 11.5 dB. Maximum available power gain reaches 13 dB at 20 mA bias.

Feature Summary

• Engineered for microwave low-noise amplification applications
• Provides high power gain and low noise figure characteristics
• Utilizes a compact 3-pin Minimold surface-mount package

Applications

• Microwave low-noise amplifier circuits
• RF signal processing stages
• Communication equipment front-ends

Procurement Notes

Verify the exact ordering suffix to confirm tape-and-reel packaging specifications. Confirm that the component meets Pb-Free requirements if environmental compliance is mandatory for the assembly process. Ensure electrostatic discharge precautions are observed during handling due to device sensitivity.

Selection Notes

Select this component when designing circuits requiring a 7 GHz transition frequency and minimal noise insertion at 1 GHz. Verify that the 12 V collector-to-emitter breakdown voltage aligns with the intended supply rails. Check the hFE classification rank to ensure the DC current gain falls within the required operational range for the specific biasing network.

Part Context

This part is manufactured by CEL and corresponds to the Renesas Electronics 2SC3356 series. It serves as a specialized NPN silicon RF transistor optimized for high-frequency operation in compact form factors. The datasheet indicates phase-out status for certain variants, necessitating careful verification of availability and long-term sourcing strategies.

Replacement Considerations

Direct equivalent replacement includes the 2SC3356-T1B-A. Verify pinout compatibility and electrical parameters before substitution.