NE85633-T1B-R23-A

NE85633-T1B-R23-A

  • Description:RF TRANS NPN 12V 7GHZ SOT-23-3
  • Series:-

SKU:06eb160b539f Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 7GHZ SOT-23-3
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 1GHz
  • Gain:11.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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NE85633-T1B-R23-A

Overview

The NE85633-T1B-R23-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It utilizes a 3-pin Minimold package and operates with a collector-to-emitter voltage of 12 V and a maximum total power dissipation of 200 mW at +25°C. The device achieves a typical noise figure of 1.1 dB and a gain bandwidth product of 7 GHz under standard test conditions (VCE = 10 V, IC = 7 mA or 20 mA). The suffix R23 indicates a DC current gain (hFE) classification range of 50 to 100.

Feature Summary

  • Optimized for low-noise performance in microwave applications
  • High power gain characteristics suitable for amplifier stages
  • Epitaxial silicon construction for stable RF operation

Applications

  • Microwave low-noise amplification circuits
  • RF front-end modules requiring minimal signal degradation
  • Communication systems operating in the UHF and L-band spectrum

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm the hFE binning and packaging configuration. Confirm component authenticity through authorized channels as this part may be subject to phase-out status. Ensure that the procurement source provides valid traceability records for quality assurance purposes.

Selection Notes

Select this component when designing circuits that require a balance of low noise figure and moderate power gain at 1 GHz frequencies. Evaluate the thermal management requirements carefully due to the 200 mW power dissipation limit. Consider the hFE ranking required by the biasing network design to ensure consistent performance across production batches.

Part Context

This component belongs to the NE85633 series manufactured originally by California Eastern Laboratories (CEL), which is now a business partner of Renesas Electronics. The datasheet identifies it as a preliminary specification document revised in June 2011. The device is functionally equivalent to the 2SC3356 designation found in JEITA classifications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer's official replacement guide or contact sales offices directly for cross-reference information regarding end-of-life transitions.

NE85633-T1B-R23-ANE85633-T1B-R23-A

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