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The NE85633-T1B-R23-A is an NPN epitaxial silicon RF transistor designed for microwave low-noise amplification. It utilizes a 3-pin Minimold package and operates with a collector-to-emitter voltage of 12 V and a maximum total power dissipation of 200 mW at +25°C. The device achieves a typical noise figure of 1.1 dB and a gain bandwidth product of 7 GHz under standard test conditions (VCE = 10 V, IC = 7 mA or 20 mA). The suffix R23 indicates a DC current gain (hFE) classification range of 50 to 100.
Verify the specific ordering suffix against the manufacturer's documentation to confirm the hFE binning and packaging configuration. Confirm component authenticity through authorized channels as this part may be subject to phase-out status. Ensure that the procurement source provides valid traceability records for quality assurance purposes.
Select this component when designing circuits that require a balance of low noise figure and moderate power gain at 1 GHz frequencies. Evaluate the thermal management requirements carefully due to the 200 mW power dissipation limit. Consider the hFE ranking required by the biasing network design to ensure consistent performance across production batches.
This component belongs to the NE85633 series manufactured originally by California Eastern Laboratories (CEL), which is now a business partner of Renesas Electronics. The datasheet identifies it as a preliminary specification document revised in June 2011. The device is functionally equivalent to the 2SC3356 designation found in JEITA classifications.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer's official replacement guide or contact sales offices directly for cross-reference information regarding end-of-life transitions.