NE85633L-A

Overview

The NE85633L-A is an NPN silicon RF bipolar transistor manufactured by CEL. It is designed for high-frequency amplifier and oscillator applications, operating up to 7 GHz with a power dissipation of 200 mW. The device features a surface-mount SOT-23-3 package and is RoHS compliant. Key electrical parameters include a collector-emitter voltage of 12V and a maximum collector current of 100mA.

Feature Summary

• High-frequency operation suitable for RF amplification
• Surface-mount SOT-23-3 package design
• RoHS compliant construction

Applications

• RF amplifier circuits
• Oscillator designs
• High-frequency signal processing

Procurement Notes

Verify component authenticity through authorized CEL distributors or certified suppliers. Confirm the specific suffix 'A' matches project requirements. Check lifecycle status as obsolete data may indicate limited availability or end-of-life conditions. Request official datasheets for final parameter validation before integration.

Selection Notes

Select this component for compact high-frequency designs needing NPN performance in small packages. Ensure thermal management supports 200 mW dissipation in SOT-23-3 form factors. Verify frequency requirements align with the 7 GHz operational limit. Consider supply chain stability due to potential obsolescence status when planning long-term production runs.

Part Context

This part belongs to the NE856 series of discrete semiconductor products from CEL. It represents a specialized RF transistor solution for consumer and industrial electronics requiring miniaturized high-frequency components. The series focuses on silicon-based NPN structures optimized for gain and speed in portable devices.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Consult manufacturer channels for direct replacements or updated series equivalents given the obsolete lifecycle status.