NE85634-A

Overview

The NE85634-A is a silicon NPN bipolar transistor manufactured by CEL. It operates in the RF range with a typical transition frequency of 6.5 GHz at 1 GHz test conditions. The device features a maximum collector-emitter voltage (VCEO) of 12 V and a maximum collector current (Ic) of 100 mA. Typical performance metrics include a noise figure of 1.8 dB, a minimum DC current gain (hFE) of 10, and a maximum gain of 120. It is housed in a 34 package, which corresponds to an SOT-89 physical form factor.

Feature Summary

• Designed for high-frequency single-transistor applications
• Optimized for low-noise signal processing
• Suitable for general-purpose RF amplification

Applications

• RF front-end stages
• Low-noise amplifier circuits
• General-purpose RF amplification

Procurement Notes

Verify the specific manufacturer designation and JEITA equivalent part number against official component documentation before procurement. Confirm that the package style matches the required mechanical footprint for the target circuit design. Ensure all electrical parameters align with the system requirements.

Selection Notes

Select this component when a silicon NPN transistor with a 6.5 GHz transition frequency is required. Consider the 12 V collector-emitter voltage rating and 100 mA current limit for biasing constraints. Evaluate the noise figure and gain specifications against the specific application's sensitivity and amplification needs.

Part Context

This component belongs to the CEL silicon bipolar transistor portfolio, specifically categorized under single transistors. It serves as a discrete active element for radio frequency signal processing tasks within wireless connectivity and RF systems.

Replacement Considerations

The NE85634-A is electrically equivalent to the 2SC3357. Verify pinout compatibility and thermal characteristics when substituting with other manufacturers' equivalents.