NE85634-T1-RF-A

Overview

The CEL NE85634-T1-RF-A is a silicon NPN bipolar transistor designed for RF applications. It operates with a maximum transition frequency of 6.5 GHz and features a typical noise figure of 1.8 dB at 1 GHz. The device supports a collector-emitter voltage of 12 V and a maximum collector current of 100 mA. It is housed in a 34 package, which corresponds to the SOT-89 surface-mount configuration.

Feature Summary

• Silicon NPN construction optimized for radio frequency signal processing
• Low noise performance suitable for sensitive receiver front-end stages
• High transition frequency enabling operation across UHF and lower microwave bands

Applications

• RF amplifier circuits
• Low noise amplification stages
• General purpose RF signal processing

Procurement Notes

Verify the specific suffix T1-RF-A against official manufacturer documentation to confirm tape-and-reel packaging and exact binning specifications. Ensure the component matches the required SOT-89 footprint and lead finish before integration into the design.

Selection Notes

Select this component when a silicon NPN transistor with a 6.5 GHz transition frequency and low noise characteristics is required. Compare its 12 V rating and 100 mA current limit against circuit requirements to ensure adequate headroom for the intended application environment.

Part Context

This part belongs to the CEL silicon bipolar transistor family, specifically within the NE856 series. These devices are engineered for high-frequency analog applications, offering a balance of gain, noise performance, and power handling capabilities for wireless communication systems.

Replacement Considerations

The datasheet lists the JEITA equivalent part number as 2SC3357. Verify pinout compatibility and electrical parameter overlaps with this equivalent before substitution.