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Product Detailed Parameters
- Description：RF TRANS NPN 12V 9GHZ SOT-143
- Series：-
- Mfr：CEL
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
- Gain：13dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 10V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-253-4, TO-253AA
- Supplier Device Package：SOT-143
- Grade：-
- Qualification：-
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Overview
The CEL NE85639 is a silicon NPN bipolar transistor designed for RF applications up to 1 GHz. It features a typical transition frequency (fT) of 7 GHz and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a maximum collector current (Ic) of 100 mA and operates with a typical DC current gain (hFE) of 14.2 at 1 GHz test conditions. Packaged in the SOT-143 format, it provides high linearity and low noise performance suitable for wireless communication systems.
Feature Summary
- High transition frequency capability for broadband RF signal processing
- Low noise figure characteristics optimized for sensitive receiver front-ends
- Robust linear gain performance across standard operating frequencies
Applications
- Wireless communication transceivers
- RF amplifier stages in mobile devices
- General purpose RF signal conditioning
Procurement Notes
Verify the specific JEITA equivalent part number 2SC4093 against system requirements. Confirm that the SOT-143 package dimensions align with the PCB footprint design. Ensure thermal management strategies account for the specified maximum current limits during operation.
Selection Notes
Select this component when a silicon NPN transistor with high fT and low noise is required for sub-1 GHz applications. Compare hFE stability and VCEO ratings against alternative discrete options. Validate compatibility with existing biasing networks and impedance matching circuits used in the target RF architecture.
Part Context
This component belongs to the CEL silicon bipolar transistor portfolio, specifically engineered for radio frequency amplification tasks. It serves as a discrete active element within larger RF subsystems, offering a balance between performance metrics and manufacturing cost efficiency for consumer electronics and industrial wireless equipment.
Replacement Considerations
The JEITA equivalent designation is 2SC4093. Verify pinout compatibility and electrical parameter tolerances before substituting with other manufacturers' equivalents in the SOT-143 package.
