NE85639-T1-R28-A

Description：RF TRANS NPN 12V 9GHZ SOT-143
Series：-

SKU:9e38d683a5fe Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 9GHZ SOT-143
Series：-
Mfr：CEL
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：9GHz
Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
Gain：13dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 10V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-253-4, TO-253AA
Supplier Device Package：SOT-143
Grade：-
Qualification：-

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NE85639-T1-R28-A

Overview

The NE85639-T1-R28-A is an NPN silicon bipolar RF transistor manufactured by CEL. It features a maximum collector-emitter voltage of 12V and a maximum collector current of 100mA. The device supports operation up to 9GHz with a maximum power dissipation of 200mW. It offers a minimum DC current gain of 50 at 20mA and 10V. The component is housed in a surface-mount SOT-143 package and has a maximum junction temperature rating of 150°C.

Feature Summary

Designed for high-frequency RF applications up to 9GHz
NPN silicon bipolar junction transistor technology
Surface-mount SOT-143 packaging for compact integration

Applications

RF amplifier circuits
High-frequency signal processing
Wireless communication systems

Procurement Notes

Verify the obsolete status of this part number before procurement planning, as it is no longer manufactured by CEL. Confirm availability through authorized distributors or approved substitute components. Ensure that any replacement parts meet the original electrical specifications and package requirements to maintain system integrity. Check RoHS compliance status if required by specific regulatory standards.

Selection Notes

Select this component for designs requiring NPN RF transistors with 12V breakdown and 9GHz performance. Consider the SOT-143 package constraints for PCB layout. Evaluate thermal management capabilities given the 200mW power limit and 150°C junction temperature rating. Assess compatibility with existing circuit topologies for RF amplification tasks.

Part Context

This component belongs to the family of bipolar RF transistors produced by CEL (California Eastern Laboratories). It is specifically engineered for radio frequency applications requiring high-speed switching and amplification. The T1 suffix indicates the specific package type, while R28 denotes the tape and reel configuration for automated assembly processes.

Replacement Considerations

The datasheet lists similar parts as substitutes due to the obsolete status. Verify electrical equivalence for voltage, current, and frequency ratings when selecting alternatives.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.