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Product Detailed Parameters
- Description：RF TRANS PNP 12V 8.5GHZ SOT-23-3
- Series：-
- Mfr：CEL
- Package：Strip
- Transistor Type：PNP
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8.5GHz
- Noise Figure (dB Typ @ f)：1.5dB @ 1GHz
- Gain：12dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 20mA, 8V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The CEL NE97733-A is a PNP silicon high-frequency transistor designed for ultrahigh-speed current-mode switching and microwave amplifier applications up to 3.5 GHz. It features a typical gain-bandwidth product (fT) of 8.5 GHz, ensuring rapid response times suitable for demanding RF environments. The device offers high insertion power gain, measured at 12 dB at 1 GHz, and operates within a standard SOT-23 package. Its complementary NPN counterpart is the NE68133.
Feature Summary
- Optimized for ultrahigh-speed current-mode switching operations
- Capable of functioning as a microwave amplifier in frequencies up to 3.5 GHz
- Provides high gain bandwidth product for efficient signal processing
- Designed with excellent performance and reliability characteristics
Applications
- Ultrahigh speed current mode switching circuits
- Microwave amplifiers operating up to 3.5 GHz
- High frequency signal processing systems
Procurement Notes
Verify the specific suffix 'A' against official manufacturer documentation to confirm exact binning or testing parameters. Ensure compatibility with existing SOT-23 footprints and validate thermal management requirements for high-frequency operation before integration into final designs.
Selection Notes
Select this component when designing circuits requiring fast switching speeds or amplification in the microwave range. Consider the complementary NPN NE68133 if an NPN configuration is needed. Evaluate the 8.5 GHz fT specification against system bandwidth requirements to ensure adequate performance margins for the intended application frequency.
Part Context
California Eastern Laboratories (CEL) specializes in RF semiconductors and wireless connectivity solutions. The NE97733 belongs to their portfolio of silicon bipolar transistors, which are engineered for high-frequency performance. This part supports designers in creating robust RF front-end components and high-speed switching modules for various wireless communication standards.
Replacement Considerations
The NE68133 serves as the direct NPN complementary counterpart. For general high-frequency PNP replacements, verify specifications against parts like the MMBR4957LT1 or CM5583, ensuring fT and package compatibility match the original design constraints.
