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The NE97733-T1B-A is a PNP RF transistor manufactured by CEL, designed for high-frequency applications up to 8.5 GHz. It features a maximum collector-emitter breakdown voltage of 12V and a maximum power dissipation of 200mW. The device offers a typical noise figure of 1.5dB at 1GHz and a DC current gain (hFE) of at least 20 at 20mA with 8V bias. With a maximum collector current of 50mA and a junction temperature rating of 150°C, it is housed in a surface-mount SOT-23 package.
Verify component authenticity through authorized CEL distributors or certified suppliers. Confirm the obsolete status and lead times prior to procurement planning. Ensure storage conditions comply with moisture sensitivity levels to maintain reliability during soldering processes.
Select this component for designs requiring PNP topology at frequencies near 8.5 GHz. Evaluate thermal management capabilities given the 200mW power limit and 150°C junction temperature. Compare noise figures against alternative devices if signal integrity is critical in the 1GHz range.
This part belongs to the CEL discrete semiconductor portfolio, specifically within their RF transistor lineup. It serves as a specialized component for microwave frequency applications where low noise and moderate power handling are required in a small form factor.
As the part is marked obsolete, verify functional equivalents with matching SOT-23 packages and similar 8.5 GHz transition frequencies. Cross-reference electrical parameters such as Vceo, Ptot, and noise figure to ensure circuit compatibility.