NE97833-A

Overview

The NE97833 is a PNP silicon bipolar transistor manufactured by CEL, equivalent to the NEC 2SA1978. It operates with a maximum collector-emitter voltage (VCEO) of 5.5 V and a maximum collector current (Ic) of -50 mA. The device features a typical transition frequency (fT) of 5.5 GHz at 1 GHz test frequency and a DC current gain (hFE) of 200. Packaged in SOT-23 format, it is designed for RF applications requiring high-frequency performance.

Feature Summary

• PNP silicon bipolar construction optimized for radio frequency operations
• High transition frequency capability suitable for broadband amplification
• Compact surface-mount package design for space-constrained layouts

Applications

• RF amplifier stages
• Broadband signal processing circuits
• General-purpose switching applications

Procurement Notes

Verify the specific manufacturer source and datasheet version before integration. Confirm that the SOT-23 pinout matches the target PCB footprint. Ensure thermal management requirements align with the specified power dissipation limits during operation.

Selection Notes

Select this component when a PNP configuration is required for frequencies up to several gigahertz. Compare the 5.5 V breakdown voltage against system supply rails. Evaluate the -50 mA current limit against load requirements to ensure safe operating area compliance.

Part Context

This part belongs to the Silicon Bipolar Transistors category within the CEL product portfolio. It serves as an alternative to the NEC 2SA1978 designation. The device supports designs needing discrete RF amplification or switching functions in compact form factors.

Replacement Considerations

The NEC 2SA1978 is the documented JEITA equivalent part number. Verify electrical parameter compatibility before substitution.