NESG2030M04-A

Overview

The NESG2030M04-A is a Pb-free NPN SiGe high-frequency transistor manufactured by CEL. It utilizes NEC's state-of-the-art SiGe wafer process, offering a typical transition frequency of 60 GHz for applications spanning 100 MHz to over 10 GHz. The device supports a collector current range from 250 μA to 25 mA with a maximum DC input of 35 mA. Key electrical parameters at VCE = 2 V and IC = 5 mA include a noise figure of 0.9 dB and an associated gain of 16 GHz at 2 GHz. At IC = 20 mA, it provides a maximum stable gain of 20 dB and an insertion power gain of 18 dB at 2 GHz. The component is housed in the low-profile M04 package.

Feature Summary

• Utilizes advanced SiGe wafer process technology for high-frequency performance up to 10 GHz.
• Features a low-profile flat lead style M04 package designed for portable wireless applications.
• Provides excellent low voltage and low current operation suitable for mobile communication systems.
• Delivers high maximum stable gain and low noise figure characteristics for LNA and oscillator requirements.

Applications

• Low Noise Amplifiers (LNA) in mobile communication systems
• Oscillator circuits for wireless devices
• Portable wireless equipment requiring low profile components

Procurement Notes

Verify that the ordering suffix -A confirms the Pb-free status as defined by CEL. Confirm the specific quantity format required, such as non-reel packs or tape and reel options. Ensure compliance with RoHS directives is documented for the intended application environment. Check for any specific handling instructions related to the thin super minimold package.

Selection Notes

Select this component when designing circuits operating between 100 MHz and 10 GHz that require high gain and low noise. Consider the M04 package dimensions if space constraints are critical for portable designs. Evaluate bias conditions carefully, as performance metrics vary significantly across the 250 μA to 25 mA collector current range. Ensure thermal management aligns with the specified junction temperature limits.

Part Context

This part belongs to the NESG2030M04 series of NPN SiGe transistors originally developed by NEC. CEL distributes these components as a business partner of NEC Compound Semiconductor Devices, Ltd. The -A suffix specifically denotes the Pb-free variant compliant with EU RoHS directives, maintaining identical electrical characteristics to the standard version while meeting environmental standards.

Replacement Considerations

NESG2030M04-T2-A

FAQ

What does the -A suffix indicate for the NESG2030M04?

The -A suffix indicates that the device is Pb-free and compliant with EU RoHS directives, while retaining the same base part number and electrical specifications.

What is the typical transition frequency of the NESG2030M04?

The typical transition frequency is 60 GHz, allowing usability from 100 MHz to over 10 GHz.

What is the recommended collector current range for optimal performance?

The device provides a usable current range of 250 μA to 25 mA, with a maximum DC current input of 35 mA.