NESG2030M04-T2-A

NESG2030M04-T2-A

  • Description:RF TRANS NPN 2.3V 60GHZ M04
  • Series:-

SKU:d91009ed1a0c Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 2.3V 60GHZ M04
  • Series:-
  • Mfr:CEL
  • Package:Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):2.3V
  • Frequency - Transition:60GHz
  • Noise Figure (dB Typ @ f):0.9dB ~ 1.1dB @ 2GHz
  • Gain:16dB
  • Power - Max:80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 5mA, 2V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-343F
  • Supplier Device Package:M04
  • Grade:-
  • Qualification:-

Download product information

NESG2030M04-T2-A

Overview

The NESG2030M04-T2-A is a Pb-free NPN SiGe high-frequency transistor manufactured by CEL. It utilizes NEC's state-of-the-art SiGe wafer process, achieving a typical transition frequency (fT) of 60 GHz for operation from 100 MHz to over 10 GHz. The device supports a collector current range of 250 μA to 25 mA with a maximum DC input of 35 mA. Key electrical parameters include a Maximum Stable Gain (MSG) of 20 dB at 2 GHz and a Noise Figure (NF) as low as 0.9 dB at 2 GHz. It operates within a VCEO rating of 2.3 V and features an M04 flat lead package with a height of 0.59 mm.

Feature Summary

  • Utilizes advanced SiGe wafer process technology for high-frequency performance up to 10 GHz.
  • Features a low-profile M04 flat lead style package designed for improved RF characteristics in portable wireless applications.
  • Provides excellent low voltage and low current performance suitable for sensitive signal processing.

Applications

  • Low Noise Amplifiers (LNA) in mobile communication systems
  • Oscillator circuits requiring stable high-frequency generation
  • Portable wireless devices demanding compact form factors

Procurement Notes

Verify the -A suffix confirms Pb-free compliance per EU RoHS Directive 2002/95/EC. Confirm the -T2 designation indicates reel packaging containing 3,000 pieces. Ensure the specific part number matches the required environmental standards for the target assembly process.

Selection Notes

Select this component for designs requiring high gain and low noise at frequencies between 100 MHz and 10 GHz. Consider the 2.3 V VCEO limit when designing biasing networks. The M04 package footprint corresponds to SOT-343 dimensions, facilitating integration into space-constrained PCB layouts.

Part Context

This component belongs to the NESG2030 series of NPN SiGe transistors. It is distributed by CEL as a business partner of NEC Compound Semiconductor Devices, Ltd. The device is functionally equivalent to the EIAJ registered number 2SC5761.

Replacement Considerations

NESG2030M04 serves as the base non-Pb-free variant. NESG2030M04-T2 represents the standard reel version without the Pb-free designation.

FAQ

What does the -A suffix indicate on the NESG2030M04-T2-A?

The -A suffix designates that the device is Pb-free and compliant with the EU RoHS directive, while maintaining the same base part number functionality.

What is the typical transition frequency (fT) of this transistor?

The typical transition frequency is 60 GHz, allowing for effective operation in applications ranging from 100 MHz to over 10 GHz.

How does the M04 package benefit RF performance?

The M04 package features a flat lead style which is ideal for portable wireless applications and provides better RF performance compared to traditional lead styles.

NESG2030M04-T2-ANESG2030M04-T2-A

Click on the inquiry