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The NESG2046M33-A is an NPN Silicon Germanium (SiGe) RF transistor designed for low noise and high-gain amplification. It features a 3-pin Super Lead-less Minimold (M33) package. Key electrical parameters include a collector-to-emitter voltage of 5 V, a collector current of 40 mA, and total power dissipation of 130 mW. At 2 GHz with VCE = 1 V and IC = 3 mA, it achieves a typical noise figure of 0.8 dB and associated gain of 11.5 dB. The device has a gain bandwidth product of 18 GHz at IC = 15 mA.
Verify the specific ordering suffix when sourcing components. The -A suffix indicates compliance with RoHS directives regarding restricted substances. Confirm availability status as distribution channels may vary. Ensure proper electrostatic discharge precautions are observed during handling due to component sensitivity.
Select this component for designs prioritizing low noise figures and high gain at 2 GHz frequencies. Verify that the 5 V collector-to-emitter voltage rating meets the circuit's supply requirements. Consider the 130 mW power dissipation limit and ensure adequate thermal management on the PCB. Check if the M33 package dimensions align with the board layout constraints.
This part is manufactured by California Eastern Laboratories (CEL), a business partner of NEC Compound Semiconductor Devices, Ltd. It belongs to the NESG2046 series of NPN SiGe transistors. The datasheet identifies it as a preliminary specification document dated September 2004. The manufacturer certifies compliance with EU RoHS directives.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official manufacturer replacement guides or equivalent parameter matching from other vendors.
The -A suffix indicates that the device is Pb-free and compliant with the European Union RoHS directive.
The typical noise figure is 0.8 dB when measured at VCE = 1 V, IC = 3 mA, and f = 2 GHz.
The absolute maximum collector-to-base voltage (VCBO) rating is 13 V.