NESG2046M33-A

NESG2046M33-A

  • Description:RF TRANS NPN 5V 18GHZ 3-MINI
  • Series:-

SKU:d402d4c22d34 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 18GHZ 3-MINI
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:18GHz
  • Noise Figure (dB Typ @ f):0.8dB ~ 1.5dB @ 2GHz
  • Gain:9.5dB ~ 11.5dB
  • Power - Max:130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 2mA, 1V
  • Current - Collector (Ic) (Max):40mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, Flat Leads
  • Supplier Device Package:3-SuperMiniMold (M33)
  • Grade:-
  • Qualification:-

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NESG2046M33-A

Overview

The NESG2046M33-A is an NPN Silicon Germanium (SiGe) RF transistor designed for low noise and high-gain amplification. It features a 3-pin Super Lead-less Minimold (M33) package. Key electrical parameters include a collector-to-emitter voltage of 5 V, a collector current of 40 mA, and total power dissipation of 130 mW. At 2 GHz with VCE = 1 V and IC = 3 mA, it achieves a typical noise figure of 0.8 dB and associated gain of 11.5 dB. The device has a gain bandwidth product of 18 GHz at IC = 15 mA.

Feature Summary

  • Optimized for low noise and high-gain amplification applications in the RF spectrum.
  • Utilizes high breakdown voltage technology to provide a 5.0 V collector-to-emitter rating.
  • Incorporates a leadless 3-pin M33 package suitable for surface-mount assembly.

Applications

  • Low noise amplifier stages operating around 2 GHz.
  • High-gain amplification circuits requiring minimal signal degradation.
  • RF front-end modules utilizing SiGe technology.

Procurement Notes

Verify the specific ordering suffix when sourcing components. The -A suffix indicates compliance with RoHS directives regarding restricted substances. Confirm availability status as distribution channels may vary. Ensure proper electrostatic discharge precautions are observed during handling due to component sensitivity.

Selection Notes

Select this component for designs prioritizing low noise figures and high gain at 2 GHz frequencies. Verify that the 5 V collector-to-emitter voltage rating meets the circuit's supply requirements. Consider the 130 mW power dissipation limit and ensure adequate thermal management on the PCB. Check if the M33 package dimensions align with the board layout constraints.

Part Context

This part is manufactured by California Eastern Laboratories (CEL), a business partner of NEC Compound Semiconductor Devices, Ltd. It belongs to the NESG2046 series of NPN SiGe transistors. The datasheet identifies it as a preliminary specification document dated September 2004. The manufacturer certifies compliance with EU RoHS directives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official manufacturer replacement guides or equivalent parameter matching from other vendors.

FAQ

What does the -A suffix indicate for this part number?

The -A suffix indicates that the device is Pb-free and compliant with the European Union RoHS directive.

What is the typical noise figure at 2 GHz?

The typical noise figure is 0.8 dB when measured at VCE = 1 V, IC = 3 mA, and f = 2 GHz.

What is the maximum collector-to-base voltage?

The absolute maximum collector-to-base voltage (VCBO) rating is 13 V.

NESG2046M33-ANESG2046M33-A

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