NESG2107M33-T3-A

NESG2107M33-T3-A

  • Description:RF TRANS NPN 5V 10GHZ 3-MINI
  • Series:-

SKU:4494319b3921 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 10GHZ 3-MINI
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):0.9dB ~ 1.5dB @ 2GHz
  • Gain:7dB ~ 10dB
  • Power - Max:130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 5mA, 1V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, Flat Leads
  • Supplier Device Package:3-SuperMiniMold (M33)
  • Grade:-
  • Qualification:-

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NESG2107M33-T3-A

Overview

The NESG2107M33-T3-A is an NPN silicon transistor manufactured by CEL, designed for oscillator and high-gain amplification applications. It features a 3-pin Super Lead-Less Minimold (M33) package. Key electrical ratings include a collector-to-base voltage of 13.0 V, collector-to-emitter voltage of 5.0 V, and emitter-to-base voltage of 1.5 V. The device supports a maximum collector current of 100 mA with total power dissipation of 130 mW. RF characteristics at 2 GHz include a noise figure of 0.9 dB typical, associated gain of 10 dB typical, and a gain bandwidth product of 10 GHz at 5 mA or 20 GHz at 20 mA.

Feature Summary

  • High breakdown voltage technology for SiGe transistors
  • Optimized for oscillator and high-gain amplification circuits
  • Compact 3-pin Super Lead-Less Minimold (M33) package

Applications

  • Oscillator circuits
  • High-gain amplification stages

Procurement Notes

Verify the specific ordering suffix when sourcing this component. The datasheet indicates that the -A suffix designates a lead-free device compliant with RoHS directives, while the -AZ suffix applies to devices exempted from certain requirements but still featuring lead-free terminals. Confirming the exact suffix ensures compliance with environmental standards and material specifications required for your assembly process.

Selection Notes

Select this component based on its high-frequency performance metrics, specifically the gain bandwidth product reaching 20 GHz at higher bias currents. Ensure the circuit design accommodates the 5.0 V collector-to-emitter voltage limit and the 130 mW power dissipation capability. The M33 package dimensions must be verified against the PCB footprint requirements during the layout phase.

Part Context

This part belongs to the NESG2107 series of NPN silicon transistors produced by CEL, a business partner of NEC Compound Semiconductor Devices. The series is characterized by high breakdown voltage technology and is intended for RF applications requiring low noise and high gain in a small form factor.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

NESG2107M33-T3-ANESG2107M33-T3-A

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