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Product Detailed Parameters
- Description：RF BIPOLAR TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NESG340034-T1-A is a small-signal bipolar RF transistor manufactured by Renesas Electronics Corporation. It is designed for high-frequency applications, typically operating in the microwave range. The device features a surface-mount package suitable for automated assembly processes. Key electrical characteristics include a typical noise figure of 0.65 dB at 1 GHz with VCE = 3.3 V and IC = 15 mA. It delivers a typical output power (P1dB) of 21 dBm at 1 GHz under VCE = 3.3 V and set collector current of 40 mA. The component operates within standard commercial temperature ranges.
Feature Summary
- Optimized low-noise performance for sensitive receiver front-ends
- High linearity and output power capability for signal amplification
- Designed for stable operation in microwave frequency bands
Applications
- Wireless communication base stations
- Point-to-point microwave radio systems
- Satellite communication equipment
Procurement Notes
Verify the specific ordering suffix to ensure the correct tape-and-reel packaging configuration matches your assembly requirements. Confirm that the component meets the necessary quality grade specifications for your intended application environment. Cross-reference the datasheet revision date to ensure compatibility with current design standards. Check for any recent product change notifications regarding material or manufacturing process updates.
Selection Notes
Select this component when low noise figure and moderate output power are required at 1 GHz frequencies. Ensure the biasing circuit supports the specified collector voltage and current settings for optimal performance. Consider thermal management requirements based on the power dissipation characteristics. Verify that the package dimensions fit within the available PCB real estate constraints.
Part Context
This part belongs to the NESG series of RF transistors from Renesas, which are engineered for broadband microwave applications. The series provides solutions for amplification stages where signal integrity and efficiency are critical. These transistors are commonly integrated into modules for telecommunications infrastructure.
Replacement Considerations
Consult official cross-reference lists for direct replacements. Similar parts may include the NESG340033-T1B-A, but verify pinout and electrical parameters before substitution.
