NFAM4512SCBUT

FET, MOSFET Arrays Overview

The NFAM4512SCBUT is a silicon carbide (SiC) MOSFET from onsemi’s M3 series, rated for 1200 V drain-source breakdown voltage and 50 A continuous current. It features a low on-resistance of 45 mΩ in a 39-MINI DIP package. This component utilizes advanced SiC technology to support high-efficiency power conversion applications requiring robust thermal performance and fast switching capabilities.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide material for superior thermal conductivity and high-temperature operation compared to traditional silicon devices.
• Integrates low on-resistance characteristics to minimize conduction losses and improve overall system efficiency.
• Designed with a compact 39-MINI DIP package to facilitate space-constrained PCB layouts.

FET, MOSFET Arrays Applications

• High-frequency DC-DC converters
• Industrial motor drives
• Uninterruptible power supplies (UPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific revision level and packaging configuration directly with authorized distributors or the manufacturer before ordering. Confirm that the 39-MINI DIP footprint matches your design requirements. Ensure compliance with RoHS standards and check for any end-of-life notifications or alternative part recommendations from onsemi.

FET, MOSFET Arrays Selection Notes

Select this component when high-voltage isolation and low conduction loss are critical. The 1200V rating suits medium-voltage systems. Consider the 45mΩ Rds(on) for thermal management needs. Evaluate the 39-MINI DIP package size against available board space. Compare switching speed requirements against other M3 series options.

FET, MOSFET Arrays Part Context

This device belongs to onsemi’s EliteSiC portfolio, focusing on high-performance power semiconductors. It complements other SiC MOSFETs in the M3 family, offering a balance of voltage rating and current handling. The product line targets next-generation power electronics demanding higher efficiency and density.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible substitutes within the same 39-MINI DIP form factor. Review datasheets for equivalent 1200V, 50A SiC MOSFETs with similar Rds(on) values. Verify gate charge parameters if switching frequency compatibility is required.