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NFAM5812SCBUT is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is SIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for NFAM5812SCBUT
- Description：SIC
- Series：-
- Mfr：onsemi
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：6 N-Channel (Three Phase Inverter)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：39-PowerDIP Module (1.413", 35.90mm), 30 Leads
- Supplier Device Package：39-MINI DIP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for NFAM5812SCBUT
FET, MOSFET Arrays Overview
The NFAM5812SCBUT is a high-voltage N-channel Power MOSFET manufactured by onsemi. It utilizes the company's proprietary Super Junction technology to achieve low specific on-resistance and fast switching characteristics. The device is housed in a TO-263AB (D2PAK) surface-mount package, designed for efficient thermal performance. Key electrical parameters include a drain-source voltage rating of 580V and a continuous drain current capability of 12A at 25°C case temperature. This component is engineered for high-efficiency power conversion applications requiring robust blocking capabilities and minimal conduction losses.
FET, MOSFET Arrays Feature Summary
- Super Junction technology enables low specific on-resistance for improved efficiency
- High breakdown voltage rating suitable for demanding power supply environments
- Fast switching characteristics reduce dynamic power losses during operation
- Surface-mount D2PAK package facilitates automated assembly and thermal management
FET, MOSFET Arrays Applications
- High-frequency switch-mode power supplies (SMPS)
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
FET, MOSFET Arrays Procurement Notes
Verify the exact ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and specific thermal ratings. Ensure that the procurement channel provides traceable documentation confirming the component originates from authorized manufacturing sources to prevent counterfeit infiltration.
FET, MOSFET Arrays Selection Notes
Select this component when designing circuits requiring high voltage isolation combined with moderate current handling capabilities. Evaluate the thermal resistance characteristics of the PCB layout to ensure the junction temperature remains within safe operating limits under maximum load conditions.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's high-voltage MOSFET portfolio, leveraging advanced semiconductor structures to outperform traditional planar technologies. It serves as a critical switching element in modern power electronics, offering a balance between voltage stress tolerance and conductive efficiency for industrial and commercial equipment.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other Super Junction MOSFETs from onsemi or competitors offering identical 580V/12A specifications and compatible TO-263AB footprints. Verify gate charge and threshold voltage similarities to maintain existing drive circuit functionality without modification.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
