NGB18N40ACLBT4G

$0.59

Description：IGBT 430V 18A 115W D2PAK3
Series：-

SKU:7d98c7b70242 Category: Single IGBTs Brand: Littelfuse Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT 430V 18A 115W D2PAK3
Series：-
Mfr：Littelfuse Inc.
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：430 V
Current - Collector (Ic) (Max)：18 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 4V, 15A
Power - Max：115 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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NGB18N40ACLBT4G

Overview

The NGB18N40ACLBT4G is a single IGBT manufactured by Littelfuse Inc., housed in a D2PAK surface-mount package. It features a maximum collector-emitter breakdown voltage of 430 V and a continuous collector current rating of 18 A. The device supports a peak pulse collector current of 50 A and has a maximum power dissipation of 115 W. It operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

Logic-level input configuration for simplified gate drive requirements
Surface-mount D2PAK packaging designed for efficient thermal management
High-voltage capability suitable for demanding power switching applications

Applications

Motor control systems
Switch-mode power supplies
Industrial inverters

Procurement Notes

Verify the specific suffix 'A' against official Littelfuse documentation to confirm exact electrical tolerances, as variations exist within the NGB18N40 family. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as legacy data may indicate non-compliance for earlier production runs. Ensure the D2PAK footprint matches the target PCB design.

Selection Notes

Select this component when a 430 V rated IGBT with 18 A continuous current capacity is required in a compact surface-mount form factor. The logic-level gate drive simplifies interface circuitry compared to standard gate thresholds. Evaluate thermal resistance parameters against the application's heat sinking capabilities to ensure the 115 W power dissipation limit is not exceeded under operating conditions.

Part Context

This part belongs to the NGB18N series of insulated-gate bipolar transistors from Littelfuse (formerly onsemi). These devices are engineered for high-efficiency power switching, combining the high-input impedance of MOSFETs with the low conduction losses of bipolar transistors. The series is widely utilized in medium-power industrial and consumer electronics applications requiring robust performance.