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The NGB8202ANTF4G is a logic-level insulated gate bipolar transistor (IGBT) manufactured by ON Semiconductor, packaged in a D2PAK (CASE 418B). It features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers. Key electrical parameters include a collector-emitter voltage of 440 V, continuous collector current of 20 A, and pulsed collector current of 50 A. The device operates within a junction temperature range of -55°C to +175°C.
Verify the component manufacturer as ON Semiconductor, despite the Littelfuse brand association in the query. Confirm the specific suffix 'TF4G' indicates tape and reel packaging containing 700 units per reel. Ensure the part number matches the exact marking diagram code GB8202xxG for correct identification.
Select this IGBT for applications requiring high voltage and high current switching with integrated protection. The logic-level gate drive simplifies interface with microprocessors. Consider the thermal resistance characteristics and operating temperature limits when designing heat dissipation solutions for the D2PAK package.
This component belongs to the NGB8202N/AN series of ignition IGBTs. It is designed specifically for automotive and industrial environments where robust switching and protection against transient voltages are critical. The integration of protection circuits reduces the need for external components in driver designs.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing driver circuits before substitution.
The maximum collector-emitter voltage (VCES) is rated at 440 V.
Yes, it integrates gate-emitter ESD protection, an internal ESD diode, and a temperature-compensated gate-collector voltage clamp.
The device supports an operating and storage temperature range from -55°C to +175°C.