NGB8202ANTF4G

NGB8202ANTF4G

$0.60
  • Description:IGBT 440V 20A TO-263
  • Series:-

SKU:4628b69d5bf8 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 440V 20A TO-263
  • Series:-
  • Mfr:Littelfuse Inc.
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):440 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):50 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 4.5V, 20A
  • Power - Max:150 W
  • Switching Energy:-
  • Input Type:Logic
  • Gate Charge:-
  • Td (on/off) @ 25°C:-/5µs
  • Test Condition:300V, 9A, 1kOhm, 5V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D2PAK)
  • Grade:-
  • Qualification:-

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NGB8202ANTF4G

Overview

The NGB8202ANTF4G is a logic-level insulated gate bipolar transistor (IGBT) manufactured by ON Semiconductor, packaged in a D2PAK (CASE 418B). It features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers. Key electrical parameters include a collector-emitter voltage of 440 V, continuous collector current of 20 A, and pulsed collector current of 50 A. The device operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Integrates gate-emitter ESD protection and an internal ESD diode.
  • Features a temperature-compensated gate-collector voltage clamp to limit stress applied to the load.
  • Designed with low threshold voltage for interfacing power loads to logic or microprocessor devices.
  • Provides high pulsed current capability and low saturation voltage.

Applications

  • Ignition systems
  • Direct fuel injection
  • Coil-on-plug applications
  • Driver-on-coil applications

Procurement Notes

Verify the component manufacturer as ON Semiconductor, despite the Littelfuse brand association in the query. Confirm the specific suffix 'TF4G' indicates tape and reel packaging containing 700 units per reel. Ensure the part number matches the exact marking diagram code GB8202xxG for correct identification.

Selection Notes

Select this IGBT for applications requiring high voltage and high current switching with integrated protection. The logic-level gate drive simplifies interface with microprocessors. Consider the thermal resistance characteristics and operating temperature limits when designing heat dissipation solutions for the D2PAK package.

Part Context

This component belongs to the NGB8202N/AN series of ignition IGBTs. It is designed specifically for automotive and industrial environments where robust switching and protection against transient voltages are critical. The integration of protection circuits reduces the need for external components in driver designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing driver circuits before substitution.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCES) is rated at 440 V.

Does the device include built-in protection features?

Yes, it integrates gate-emitter ESD protection, an internal ESD diode, and a temperature-compensated gate-collector voltage clamp.

What is the recommended operating temperature range?

The device supports an operating and storage temperature range from -55°C to +175°C.

NGB8202ANTF4GNGB8202ANTF4G
$0.60
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