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Product Detailed Parameters
- Description：IGBT 440V 20A 150W D2PAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：440 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The NGB8202NT4G is a logic-level Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers. The device has a collector-emitter voltage rating of 440 V, a continuous collector current of 20 A at 25°C case temperature, and a pulsed collector current capability of 50 A. It dissipates up to 150 W of power at 25°C with a thermal resistance junction-to-case of 1.0 °C/W. The saturation voltage is 1.9 V maximum at 20 A and 4.5 V gate drive. Operating temperature ranges from -55°C to +175°C.
Feature Summary
- Integrates ESD and overvoltage clamped protection for inductive load applications
- Features low threshold voltage for interfacing power loads to logic or microprocessor devices
- Includes optional internal gate resistor and gate-emitter resistor
- Temperature compensated gate-collector voltage clamp limits stress applied to the load
Applications
- Ignition systems
- Direct fuel injection
- Coil-on-plug applications
- Driver-on-coil applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as indicated by the 'G' suffix in the part number. Check datasheet revision history for any updates to electrical characteristics or package dimensions before finalizing design integration.
Selection Notes
Select this component for high-voltage switching applications requiring integrated protection features. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low saturation voltage. Consider thermal management requirements given the 150 W power dissipation rating and the specific thermal resistance values provided in the datasheet.
Part Context
This IGBT belongs to the NGB8202N series designed specifically for automotive ignition and fuel injection systems. It is housed in a D2PAK surface-mount package (CASE 418B). The 'T4G' suffix indicates tape and reel packaging and lead-free construction. It serves as a robust solution for replacing discrete protection components in coil driver circuits.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 440 V rating, 20 A current capacity, and D2PAK package form factor. Verify that alternative devices offer comparable integrated ESD and overvoltage protection capabilities.
